vishay siliconix SUP17N25-165 document number: 72850 s-71599-rev. b, 30-jul-07 www.vishay.com 1 n-channel 250-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature product summary v ds (v) r ds(on) ( )i d (a) 250 0.165 at v gs = 10 v 17 to-220ab top view gd s ordering information: SUP17N25-165-e3 d g s n-channel mosfe t notes: a. surface mounted on 1" x 1" fr4 board. b. see soa curve for voltage derating. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 250 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) b t c = 25 c i d 17 a t c = 125 c 9.8 pulsed drain current i dm 20 single pulse avalanche current i as 5 single pulse avalanche energy l = 0.1 mh e as 1.25 mj maximum power dissipation t c = 25 c p d 136 b w t a = 25 c 3.75 a operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient a r thja 40 c/w junction-to-case (drain) r thjc 1.1
www.vishay.com 2 document number: 72850 s-71599-rev. b, 30-jul-07 vishay siliconix SUP17N25-165 notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 250 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 250 v, v gs = 0 v 1 a v ds = 250 v, v gs = 0 v, t j = 125 c 50 v ds = 250 v, v gs = 0 v, t j = 175 c 250 on-state drain current b i d(on) v ds = 15 v, v gs = 10 v 17 a drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 14 a 0.130 0.165 v gs = 10 v, i d = 14 a, t j = 125 c 0.347 v gs = 10 v, i d = 14 a, t j = 175 c 0.462 forward transconductance b g fs v ds = 15 v, i d = 17 a 36 s dynamic a input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 1950 pf output capacitance c oss 160 reverse transfer capacitance c rss 70 total gate charge c q g v ds = 125 v, v gs = 10 v, i d = 17 a 30 45 nc gate-source charge c q gs 10 gate-drain charge c q gd 10 gate resistance r g f = 1 mhz 1.6 tu r n - o n d e l ay t i m e c t d(on) v dd = 125 v, r l = 7.35 i d ? 17 a, v gen = 10 v, r g = 2.5 15 25 ns rise time c t r 130 195 turn-off delay time c t d(off) 30 45 fall time c t f 100 150 source-drain diode ratings and characteristics (t c = 25 c) continuous current i s 17 a pulsed current i sm 20 forward voltage a v sd i f = 17 a, v gs = 0 v 0.9 1.5 v reverse recovery time t rr i f = 17 a, di/dt = 100 a/s 115 175 ns peak reverse recovery current i rm(rec) 10 15 a reverse recovery charge q rr 0.58 1.3 c
document number: 72850 s-71599-rev. b, 30-jul-07 www.vishay.com 3 vishay siliconix SUP17N25-165 typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 0 4 8 12 16 20 048121620 v gs = 10 thru 6 v 4 v 5 v 0 10 20 30 40 50 60 048121620 - transconductance (s) g fs t c = - 55 c 25 c 125 c i d - drain current (a) 0 700 1400 2100 2800 0 40 80 120 160 200 v ds - drain-to-source voltage (v) c - capacitance (pf) c oss c iss c rss transfer characteristics on-resistance vs. drain current gate charge v gs - gate-to-source voltage (v) - drain current (a) i d 0 4 8 12 16 20 0123456 - 55 c t c = 125 c 25 c - on-resistance ( ) i d - drain current (a) r ds(on) 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 048121620 v gs = 10 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 4 8 12 16 20 0 8 16 24 32 40 48 56 v ds = 125 v i d = 17 a
www.vishay.com 4 document number: 72850 s-71599-rev. b, 30-jul-07 vishay siliconix SUP17N25-165 typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature avalanche current vs. time 0.4 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) v gs = 10 v i d = 17 a r ds(on) - on-resistance (normalized) t in (sec) 100 1 0.000001 0.0001 0.01 0.1 0.01 (a) i dav 0.001 i av (a) at t a = 150 c 10 0.1 0.00001 i av (a) at t a = 25 c source-drain diode forward voltage drain source breakdown vs. junction temperature v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 250 265 280 295 310 325 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) (v) v (br)dss i d = 10 ma
document number: 72850 s-71599-rev. b, 30-jul-07 www.vishay.com 5 vishay siliconix SUP17N25-165 thermal ratings vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72850. maximum avalanche drain current vs. case temperature 0 4 8 12 16 20 0 25 50 75 100 125 150 175 t c - case temperature (c) - drain current (a) i d safe operating area v ds - drain-to-source voltage (v) - drain current (a) i d 10 0.1 0.1 1 10 1000 limited by r ds(on) 1 100 t c = 25 c single pulse 10 ms 100 ms, d c 100 s 10 s 100 1 ms normalized thermal transient impedance, junction-to-case s q uare wave pulse duration ( sec ) 0.02 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 1 0.05 single pulse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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